The Revolutionary memory chip

Young scientist, Jun Yao, recently found a breakthrough in the nanoelectronic field. When Yao tried to create memory devices based on graphite for school, he realized that he could create "nanocrystalline pathways in silicon oxide", by supplying voltage. Small pulses of about 8 and 3.5 volts would continuosly break and repair the "pathways". This technique became helpful to the development of the "two-terminal resistive memory bit". This discovery may pave the way to a 3-D memory chip. He actually found out that a "strong pulse through a layer of silicon oxide sandwiched between semiconducting silicon would strip off oxygen atoms, creating the nanoscale bit between the terminals" that could be switched on and off by other pulses. This breakthrough has been explored previously, but only now is there resources to make it possible. This could lead scientists to more advanced research on the 3-D chip.

Source:

http://www.livescience.com/technology/nanoelectronics-memory-chips-101001.html